Gallium arsenide is an important semiconductor material, but in the process of synthesizing gallium arsenide, the productivity is low. And a large amount of gallium arsenide slag is produced, and its arsenic and gallium content are close to 50%.

Gallium arsenide can be thermally decomposed at 800 ° C under vacuum and decomposed into elemental arsenic and metal gallium. The vacuum distillation temperature is controlled at 900-1000 ° C. The vacuum degree is below 30 Pa. And the arsenic is volatilized and then condensed and collected by a reflux system. The obtained 99.9% (3N) elemental arsenic and metal gallium are also effectively enriched (the purity of gallium depends on the content of non-volatile high-boiling impurities in the raw material gallium arsenide).

1 . Collecting coarse gallium  

2. Collecting arsenic in the condenser 

3. Collecting arsenic on the condensate cover     

Process flow chart:

Gallium arsenide – Fusion +Vacuum Distillation-Condensation-Elemental arsenic + Distillation Residue (coarse gallium)